Dislocation generation related to micro-cracks in Si wafers: High temperature in situ study with white beam X-ray topography

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 268, Issue 3-4, 2010, Pages 399-402

  Danilewsky, A ^a   Wittge, J ^a   Hess, A ^a   Croll A ^a   Allen, D ^b   McNally, P ^b   Vagovic P ^c,d   Cecilia, A ^c   Li, Z ^a,c   Baumbach, T ^c   Gorostegui Colinas, E ^e   Elizalde, M R ^e  

^a UNIVERSITY OF FREIBURG   (Germany)

^b DUBLIN CITY UNIVERSITY   (Ireland)

^c KARLSRUHE INSTITUTE OF TECHNOLOGY   (Germany)

^d INSTITUTE OF ELECTRICAL ENGINEERING   (Slovakia)

^e TECNUN UNIVERSITY OF NAVARRA   (Spain)

Author keywords

High temperature; In situ; X ray topography

Indexed keywords

APPLIED FORCES; ARTIFICIAL DAMAGE; BEAM LINES; BEFORE AND AFTER; CONSTANT TEMPERATURE; DISLOCATION GENERATION; ELLIPSOIDAL MIRRORS; EXPERIMENTAL SETUP; GERMANY; HEATING EXPERIMENT; HIGH TEMPERATURE; HIGH-TEMPERATURE IN SITU; IN-SITU; NANOINDENTERS; RESEARCH CENTRES; ROOM TEMPERATURE; SI WAFER; SYNCHROTRON LIGHT SOURCE; TEMPERATURE GRADIENT; THERMAL STRESSING; TRANSMISSION TOPOGRAPHS; WHITE BEAMS; X-RAY TOPOGRAPHY;

HEATING; LIGHT; LIGHT SOURCES; SILICON; SILICON WAFERS; SYNCHROTRON RADIATION;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 75849139979     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2009.09.013     Document Type: Article

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