|
Volumn 107, Issue 1, 2010, Pages
|
In islands and their conversion to InAs quantum dots on GaAs (100): Structural and optical properties
|
Author keywords
[No Author keywords available]
|
Indexed keywords
ANNEALING TEMPERATURES;
CRYSTALLINE STATE;
EPITAXIAL RELATIONS;
GAAS(1 0 0);
HIGH DENSITY;
INAS ISLAND;
INAS QUANTUM DOTS;
LOW TEMPERATURES;
LOWER DENSITY;
NANOSCALE DIMENSIONS;
STRUCTURAL AND OPTICAL PROPERTIES;
SUBSTRATE TEMPERATURE;
CRYSTAL GROWTH;
CRYSTALLINE MATERIALS;
GALLIUM ALLOYS;
GALLIUM ARSENIDE;
MOLECULAR BEAM EPITAXY;
MOLECULAR BEAMS;
OPTICAL PROPERTIES;
SEMICONDUCTING GALLIUM;
SEMICONDUCTING INDIUM;
SEMICONDUCTOR QUANTUM DOTS;
|
EID: 75649089720
PISSN: 00218979
EISSN: None
Source Type: Journal
DOI: 10.1063/1.3269700 Document Type: Article |
Times cited : (16)
|
References (13)
|