Effect of C/B ratio in reactants on low-pressure CVD boron-doped carbon deposited from a BCl3-C3H6-H2 mixture

Journal of Coatings Technology and Research

Volumn 6, Issue 4, 2009, Pages 509-515

  Liu, Yongsheng ^a   Zhang, Litong ^a   Cheng, Laifei ^a   Yang, Wenbin ^a   Xu, Yongdong ^a   Zeng, Qingfeng ^a  

^a NORTHWESTERN POLYTECHNICAL UNIVERSITY   (China)

Author keywords

Boron doped carbon; C B ratio; Low pressure chemical vapor deposition

Indexed keywords

BORON; CHEMICAL BONDS; CHLORINE COMPOUNDS; DEPOSITION RATES; DEPOSITS; LOW PRESSURE CHEMICAL VAPOR DEPOSITION; MORPHOLOGY;

BONDING STATE; BORON CONTENT; BORON-DOPED CARBONS; CARBON CONTENT; CROSS-SECTION MORPHOLOGY; INFILTRATION CHARACTERISTIC; LOW PRESSURE CVD; TOTAL CONTENT;

CARBON;

EID: 75549089923     PISSN: 15470091     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11998-008-9128-2     Document Type: Article

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