Drain leakage mechanisms in fully depleted SOI devices with undoped channel

European Solid-State Device Research Conference

Volumn , Issue , 2003, Pages 419-422

  Luyken, R J ^a   Specht, M ^a   Rosner W ^a   Hartwich, J ^a   Hofmann, F ^a   Dreeskornfeld, L ^a   Landgraf, E ^a   Schulz, T ^a   Stadele M ^a   Kretz, J ^a   Risch, L ^a  

^a INFINEON TECHNOLOGIES AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

DRAIN LEAKAGE; FULLY-DEPLETED SOI DEVICES; UNDOPED CHANNELS;

EID: 75549089115     PISSN: 19308876     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ESSDERC.2003.1256903     Document Type: Conference Paper

References (9)

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