Calibrated hydrodynamic simulation of deeply-scaled well-tempered nanowire field effect transistors

2007 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2007

Volumn , Issue , 2007, Pages 305-308

  Nayfeh, O M ^a   Antoniadis, D A ^a  

^a Massachusetts Institute of Technology   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

HYDRODYNAMICS; NANOWIRES; SILICON COMPOUNDS;

FULL-BAND MONTE CARLO; HYDRODYNAMIC SIMULATION; IV CHARACTERISTICS; SILICON NANOWIRE FIELD-EFFECT TRANSISTORS; VELOCITY PROFILES;

FIELD EFFECT TRANSISTORS;

EID: 75449109130     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1007/978-3-211-72861-1_73     Document Type: Conference Paper

References (7)

1. K. Yeo et al, "Gate-All-Around(GAA) Twin Silicon Nanowire MOSFET(TSNWFET) with 15 nm Length Gate and 4 nm Radius Nanowires," International Electron Devices Meeting. (2006)
2. Jung-Hoon Rhew, Zhibin Ren, and Mark Lundstrom "Benchmarking Macroscopic Transport Models for Nanotransistor TCAD," Journal of Computational Electronics, Vol. 1, pp. 385-388, 2002.
3. Amanda Duncan. Umberto Ravatoli. and Jürgen Jakurmeit "Full band Monte Carlo investigation of hot carrier trends in the scaling of metal-oxide-semiconductor field effect transistors," IEEE Transactions on Electron Devices, Vol. 45. pp. 867-876, April. 1998.
4. O. M. Nayfeh. S. Yu. and DA. Antoniadis, "On the Relationship Between Carrier Mobility and Velocity in Sub-SO nm MOSFETs via Calibrated Monte Carlo Simulation,", Proceedings of SISPAD 2004. G. Wachutka and G. Schrag, editors. Springer-Verlag, pp. 117-121, 2004.
5. Lee, Shin-Chi, Tang, Ting-Wei, "Transport Coefficients for a Silicon Hydrodynamic Model Extracted from In homogeneous Monte-Carlo Calculations,", Solid-State Electronics, Vol. 35. No. 4. pp-561-569. 1992
6. A. Khakifirooz and DA. Antoniadis. "On the Electron Mobility in ultrathin SOI and GOI,". IEEE Electron Device Letters, vol 25, pp. 80-82,2004.
7. R. Ravishankar, G. Kathawala, U. Ravaioli, S. Hasan, and M. Lundstrom. "Comparison of Monte-Carlo and NEGF simulations of double-gate MOSFETs,". Journal of Computational Electronics, vol 4. pp 39-43. 2005