Electrical properties of annealed MPCVD grown vertically aligned carbon nanotube films

Diamond and Related Materials

Volumn 13, Issue 11-12, 2004, Pages 2156-2159

  Huang, B R ^a   Huang, C S ^a   Wu, C C ^a   Chen, L C L ^b   Chen, K H ^c  

^a NATIONAL YUNLIN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Taiwan)

^b NATIONAL TAIWAN UNIVERSITY   (Taiwan)

^c INSTITUTE OF ATOMIC AND MOLECULAR SCIENCES   (Taiwan)

Author keywords

Annealing process; Electrical properties; Multiwalled carbon nanotubes; XPS

Indexed keywords

ANNEALING; COMPOSITION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; RAMAN SCATTERING; SANDWICH STRUCTURES; SCANNING ELECTRON MICROSCOPY; SILICON; SUBSTRATES; X RAY PHOTOELECTRON SPECTROSCOPY;

ELECTRICAL PROPERTIES; GRAPHENES; MULTIWALLED CARBON NANOTUBES (MWNT); SIGNAL INTENSITY;

CARBON NANOTUBES;

EID: 7544245303     PISSN: 09259635     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.diamond.2004.07.018     Document Type: Conference Paper

References (15)

1. S. Iijima, Nature 354 (1991) 56.
2. W.B. Choi, D.S. Chung, J.H. Kang, H.Y. Kim, Y.W. Jin, I.T. Han, Appl. Phys. Lett. 75 (1999) 3129.
3. S. Fan, M.G. Chapline, N.F. Franklin, T.W. Tombler, A.M. Cassel, H. Dai, Science 283 (1999) 512.
4. P.G. Collins, A. Zwttl, Phys. Rev., B 55 (1997) 9391.
5. M.S. Dresselhaus, G. Dresselhaus, Science of Fullerenes and Carbon Nanotubes, Academic Press, New York, 1996.
6. R. Martel, T. Schmidt, H.R. Shea, T. Hertel, Ph. Avouris, Appl. Phys. Lett. 73 (1998) 17.
7. M. Bockrath, et al., Nature 397 (1999) 598.
8. R. Saito, G. Dresselhaus, M.S. Dresselhaus, Physical Properties of CNTs, Imperial College Press, London, 1999.
9. C.J. Lee, Y.S. Park, W.S. Kim, N.S. Lee, J.M. Kim, Y.G. Choi, S.C. Yu, Appl. Phys. Lett. 75 (1999) 1721.
10. J.W. Liu, D.Y. Zhong, F.Q. Xie, M. Sun, E.G. Wang, W.X. Liu, Chem. Phys. Lett. 348 (2001) 357-360.
11. Z.C. Feng, A.J. Mascarenhas, W.J. Choyke, J.A. Powell, J. Appl. Phys. 61 (1988) 3176.
12. J.P. Coutures, R. Erre, D. Massiot, C. Landron, D. Billard, G. Peraudeau, Radiat Effects 98 (1986) 83-91.
13. H.L. Chang, C.H. Lin, C.T. Kuo, Diamond Relat. Mater. 11 (2002) 793-798.
14. Neamen, Semiconductor Physics and Devices: Third Edition, Irwin McGraw-Hill, Boston, (2003), CH9.
15. K. Kaneto, M. Tsurute, G. Sakai, W.Y. Cho, Y. Ando, Synth. Met. 103 (1999) 2543-2546.