Accurate characterization of mem inductors on lossy silicon

Microwave and Optical Technology Letters

Volumn 43, Issue 4, 2004, Pages 355-358

  Lee, Young Ho ^a   Lee, Sang No ^a   Yook, Jong Gwan ^a   Kim, Ji Hyuk ^b   Chun, Kuk Jin ^b  

^a Yonsei University   (South Korea)

^b Seoul National University   (South Korea)

Author keywords

CMOS grade silicon; De embedding method; MEM inductors; Parasitic effects; Spiral inductor

Indexed keywords

CHARACTERIZATION; ELECTRIC CONDUCTANCE; ELECTRIC LINES; MICROELECTROMECHANICAL DEVICES; SILICON; WIRELESS TELECOMMUNICATION SYSTEMS;

DE-EMBEDDING METHODS; LOSSY SILICON SUBSTRATES; VALIDITY;

ELECTRIC INDUCTORS;

EID: 7544236221     PISSN: 08952477     EISSN: None     Source Type: Journal    
DOI: 10.1002/mop.20468     Document Type: Article

References (6)

1. H.J. De Los Santos, RF MEMS circuit design for wireless communications, Artech House, Boston, 2002.
2. K.B. Ashby et al., High Q inductors for wireless applications in a complementary silicon bipolar process, Proc Bipolar/BiCMOS Circ Technol 1994, pp. 179-182.
3. G.M. Rebeiz, RF MEMS theory, design, and technology, Wiley, Hoboken, 2003.
4. J.-B. Yoon et al., Monolithic high-Q overhang inductors fabricated on silicon and glass substrates, IEDM Technical Dig (1999), 753-756.
5. L. Schimpf, B. Benna, and D. Proetel, A new approach to characterize substrate losses of on-chip inductors. Proc Int Conf Microelectronic Test Structures, 2001, pp. 115-118.
6. H.M. Greenhouse, Design of planar rectangular microelectronic inductors, IEEE Trans Parts Hybrids and Packaging 10 (1974), 101-109.