Thermal characteristic of Cu-Cu bonding layer in 3-D integrated circuits stack

Microelectronic Engineering

Volumn 87, Issue 4, 2010, Pages 682-685

  Tan, Chuan Seng ^a  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

Author keywords

3 D ICs; Copper; Heat dissipation; Wafer bonding

Indexed keywords

3-D ICS; 3-D INTEGRATED CIRCUIT; BONDING INTERFACES; BONDING LAYERS; DOUBLE LAYERS; HEAT DISSIPATION; SILICON DIOXIDE; THERMAL CHARACTERISTICS; THERMO COMPRESSION BONDING;

COPPER; INTEGRATED CIRCUITS; SILICA; SILICON WAFERS; THREE DIMENSIONAL;

WAFER BONDING;

EID: 75149177971     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2009.09.009     Document Type: Article

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