Defect levels of the Ge dangling bond defect

AIP Conference Proceedings

Volumn 1199, Issue , 2009, Pages 81-82

  Broqvist, Peter ^a   Alkauskas, Audrius ^a   Pasquarello, Alfredo ^a  

^a NONE

Author keywords

Charge transition levels; Dangling bond defects; Germanium; Hybrid density functional theory; Silicon

Indexed keywords

EID: 74849136153     PISSN: 0094243X     EISSN: 15517616     Source Type: Conference Proceeding    
DOI: 10.1063/1.3295564     Document Type: Conference Paper

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