Temperature-frequency dependence and mechanism of dielectric properties for γ-Y2Si2O7

Chinese Physics B

Volumn 19, Issue 1, 2010, Pages

  Hou, Zhi Ling ^a,b   Cao, Mao Sheng ^a   Yuan, Jie ^c   Song, Wei Li ^a  

^a BEIJING INSTITUTE OF TECHNOLOGY   (China)

^b BEIJING UNIVERSITY OF CHEMICAL TECHNOLOGY   (China)

^c MINZU UNIVERSITY OF CHINA   (China)

Author keywords

Y2Si2O7; Dielectric properties; Low dielectric loss; Structural relaxation polarization

Indexed keywords

FREQUENCY DEPENDENCE; LOW DIELECTRIC LOSS; NANO POWDERS; NON-DEBYE RELAXATION; POLARIZATION RELAXATION;

BLENDING; DIELECTRIC DEVICES; DIELECTRIC LOSSES; POLARIZATION; SILICON COMPOUNDS; SINTERING; STRUCTURAL RELAXATION;

SILICON;

EID: 74849126504     PISSN: 16741056     EISSN: None     Source Type: Journal    
DOI: 10.1088/1674-1056/19/1/017702     Document Type: Article

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