Low dielectric loss and non-Debye relaxation of gamma- Y2Si 2 O7 ceramic at elevated temperature in X -band

Journal of Applied Physics

Volumn 105, Issue 10, 2009, Pages

  Cao, Mao Sheng ^a   Hou, Zhi Ling ^a,b   Yuan, Jie ^c   Xiong, Lan Tian ^a   Shi, Xiao Ling ^a  

^a BEIJING INSTITUTE OF TECHNOLOGY   (China)

^b BEIJING UNIVERSITY OF CHEMICAL TECHNOLOGY   (China)

^c MINZU UNIVERSITY OF CHINA   (China)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC APPLICATION; ELEVATED TEMPERATURE; HIGH TEMPERATURE; LOW DIELECTRIC LOSS; NANO POWDERS; NON-DEBYE RELAXATION; RELAXATION PEAK; RELAXATION POLARIZATION; ROOM TEMPERATURE; STRUCTURAL DEFECT;

CERAMIC MATERIALS; DIELECTRIC DEVICES; DIELECTRIC LOSSES; HIGH TEMPERATURE APPLICATIONS; SILICON; SILICON COMPOUNDS; YTTRIUM ALLOYS;

CERAMIC CAPACITORS;

EID: 66549100382     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3117525     Document Type: Article

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