The role of gated and ungated plasma in THz detection by field effect transistors

AIP Conference Proceedings

Volumn 1199, Issue , 2009, Pages 505-506

  Sakowicz, M ^a   Lusakowski J ^a   Karpierz, K ^a   Grynberg, M ^a   Knap, W ^a   Kohler K ^b   Valusis G ^c   Golaszewska K ^d   Kaminska E ^d   Piotrowska, A ^d  

^a UNIVERSITY OF WARSAW   (Poland)

^b FRAUNHOFER INSTITUTE FOR APPLIED SOLID STATE PHYSICS IAF   (Germany)

^c CENTER FOR PHYSICAL SCIENCES AND TECHNOLOGY   (Lithuania)

^d Department of Micro and Nanotechnology of Wide Bandgap Semiconductors   (Poland)

Author keywords

2D electron plasma; Field effect transistor; Magnetic field; THz detection

Indexed keywords

EID: 74849118938     PISSN: 0094243X     EISSN: 15517616     Source Type: Conference Proceeding    
DOI: 10.1063/1.3295529     Document Type: Conference Paper

References (4)

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