Microstructural evolution during silicon carbide (SiC) formation by liquid silicon infiltration using optical microscopy

International Journal of Refractory Metals and Hard Materials

Volumn 28, Issue 2, 2010, Pages 191-197

  Margiotta, Jesse C ^a,b   Zhang, Dajie ^a   Nagle, Dennis C ^a  

^a JOHNS HOPKINS UNIVERSITY   (United States)

^b Johns Hopkins University   (United States)

Author keywords

Liquid silicon infiltration; Quantitative digital image analysis; Refractory; Silicon carbide

Indexed keywords

CARBON DIFFUSION; CARBON PREFORM; DIGITAL IMAGE ANALYSIS; INITIAL STAGES; INTERFACIAL REGION; LIQUID SILICON INFILTRATION; LIQUID-SOLID INTERFACES; MATRIX; NET SHAPE; PHASE DISTRIBUTION; POROUS CARBONS; QUANTITATIVE DIGITAL IMAGE ANALYSIS; REACTION MECHANISM; REACTION TIME; STRUCTURAL CHANGE; TIME-SCALES;

DISSOLUTION; IMAGE ANALYSIS; LIQUIDS; LSI CIRCUITS; OPTICAL DATA STORAGE; OPTICAL INSTRUMENTS; OPTICAL MICROSCOPY; POROUS SILICON; PREFORMING; REFRACTORY MATERIALS; SEEPAGE; SILICON CARBIDE; SOIL MECHANICS;

PHASE INTERFACES;

EID: 74849089257     PISSN: 02634368     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ijrmhm.2009.09.002     Document Type: Article

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