Electronic structure and dielectric properties calculations of pure tin dioxide and of vacancies in tin dioxide

AIP Conference Proceedings

Volumn 1199, Issue , 2009, Pages 124-125

  Borges, P D ^a   Scolfaro, L M R ^a   Leite Alves, H W ^b   Da Silva Jr , E F ^c  

^a UNIVERSITY OF SÃO PAULO   (Brazil)

^b Universidade Federal de S J del Rei   (Brazil)

^c FEDERAL UNIVERSITY OF PERNAMBUCO   (Brazil)

Author keywords

Defects; High k dielectric material; Impurities; Tin dioxide

Indexed keywords

EID: 74849085898     PISSN: 0094243X     EISSN: 15517616     Source Type: Conference Proceeding    
DOI: 10.1063/1.3295328     Document Type: Conference Paper

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