Electrical properties of crystalline PbxSn1-xTe0.5Se0.5 thin films

Vacuum

Volumn 84, Issue 6, 2010, Pages 807-811

  El Sayad, E A ^a   Farag, B S ^a   Amin, A T ^a  

^a NATIONAL RESEARCH CENTRE   (Egypt)

Author keywords

Chalcogenides; Electrical properties; Thin films

Indexed keywords

ACTIVATION ENERGY; CHALCOGENIDES; ELECTRIC PROPERTIES; HALL MOBILITY; HOLE CONCENTRATION; HOLE MOBILITY; INORGANIC COMPOUNDS; LEAD COMPOUNDS; SELENIUM COMPOUNDS; TELLURIUM COMPOUNDS; TEMPERATURE DISTRIBUTION; THIN FILMS; TIN; TIN COMPOUNDS;

COMPOSITIONAL DEPENDENCE; CONDUCTION MECHANISM; DEGENERATE SEMICONDUCTORS; ELECTRICAL CONDUCTIVITY; LINEAR VARIATION; P-TYPE CONDUCTION; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE;

SULFUR COMPOUNDS;

EID: 74549220517     PISSN: 0042207X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.vacuum.2009.10.048     Document Type: Article

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