High yield-low temperature growth of indium sulphide nanowires via chemical vapor deposition

Journal of Crystal Growth

Volumn 312, Issue 5, 2010, Pages 656-661

  Zervos, Matthew ^a   Papageorgiou, Pola ^a   Othonos, Andreas ^a  

^a UNIVERSITY OF CYPRUS   (Cyprus)

Author keywords

A1. Nanostructures; A3. Chemical vapor deposition processes; B1. Nanomaterials; B1. Sulfides; B2. Semiconducting materials

Indexed keywords

B1. SULFIDES; BAND GAPS; CHEMICAL VAPOR DEPOSITION PROCESS; DIRECT REACTIONS; HEXAGONAL CRYSTALS; HIGH YIELD; INDIUM SULPHIDE; LOW TEMPERATURE GROWTH; LOW-YIELD; NANO-MATERIALS; OPTICAL TRANSMISSION MEASUREMENTS; POLYCRYSTALLINE LAYERS; SEMICONDUCTING MATERIALS; TRIANGULAR SHAPES; URCHIN-LIKE; XRD SPECTRA;

CHEMICAL VAPOR DEPOSITION; HYDROSTATIC PRESSURE; LIGHT TRANSMISSION; NANOSTRUCTURED MATERIALS; NANOWIRES; SEMICONDUCTOR GROWTH; VAPORS; X RAY DIFFRACTION;

INDIUM;

EID: 74549118408     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2009.12.023     Document Type: Article

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