A study of effects of deflector position variation on leakage currents in ballistic deflection transistors

2009 IEEE Nanotechnology Materials and Devices Conference, NMDC 2009

Volumn , Issue , 2009, Pages 13-18

  Kaushal, Vikas ^a   Guarino, Gregg ^b,c   Yu, Qiaoyan ^b   Donaldson, William R ^b,c   Ampadu, Paul ^b   Sobolewski, Roman ^b,c   Margala, Martin ^a  

^a University of Massachusetts   (United States)

^b University of Rochester   (United States)

^c UNIVERSITY OF ROCHESTER   (United States)

Author keywords

Ballistic ttransport; Billiard model; Comsol modeling; Deflector; Experiments; Leakage current

Indexed keywords

BILLIARD MODEL; BILLIARD MODELS; COMSOL MODELING; CONDUCTIVE MEDIA; DEFLECTOR; DEVICE FUNCTIONALITY; DEVICE GEOMETRIES; DRAIN LEAKAGE CURRENT; ELECTRON TRANSPORT; EXPERIMENTAL MEASUREMENTS; FINITE ELEMENT ANALYSIS; LEAKAGE MECHANISM; OUTPUT CURRENT; STRUCTURAL MODIFICATIONS;

BALLISTICS; DRAIN CURRENT; EXPERIMENTS; NANOTECHNOLOGY; SIMULATORS;

LEAKAGE CURRENTS;

EID: 70449637987     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/NMDC.2009.5167571     Document Type: Conference Paper

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