Temperature and dose dependence of defect complex formation with ion implanted Mn/Fe in ZnO

Physica B: Condensed Matter

Volumn 404, Issue 23-24, 2009, Pages 4820-4822

  Molholt T E ^a   Mantovan, R ^b   Gunnlaugsson, H P ^c   Bharuth Ram, K ^d   Fanciulli, M ^b,e   Gislason H P ^a   Johnston, K ^f   Kobayashi, Y ^g   Langouche, G ^h   Masenda, H ⁱ   Naidoo, D ⁱ   Olafsson S ^a   Sielemann, R ^j   Weyer, G ^c  

^a UNIVERSITY OF ICELAND   (Iceland)

^b LABORATORIO MDM   (Italy)

^c AARHUS UNIVERSITY   (Denmark)

^d ITHEMBA LABS   (South Africa)

^e UNIVERSITY OF MILANO BICOCCA   (Italy)

^f CERN   (Switzerland)

^g INST OF PHYS AND CHEMICAL RESEARCH   (Japan)

^h KU LEUVEN   (Belgium)

ⁱ UNIVERSITY OF THE WITWATERSRAND   (South Africa)

^j Helmholtz Forschungszentrum   (Germany)

more..

Author keywords

Defect complexes; Mn and Fe ion implantation; M ssbauer spectroscopy; ZnO

Indexed keywords

DEFECT COMPLEX; DEFECT COMPLEXES; DOSE DEPENDENCES; FERRIC IRON; HIGHER TEMPERATURES; IMPLANTATION-INDUCED DEFECTS; ION IMPLANTED; SSBAUER SPECTROSCOPY; VACANCY COMPLEXES; VACANCY TRAPPING; ZNO;

DEFECTS; ION BOMBARDMENT; ION IMPLANTATION; IRON COMPOUNDS; MANGANESE; MANGANESE COMPOUNDS; MOLYBDENUM; ZINC; ZINC OXIDE;

MOLYBDENUM COMPOUNDS;

EID: 74349110493     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physb.2009.08.187     Document Type: Article

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