Fully-monolithic, 600°C differential amplifiers in 6H-SiC JFET IC technology

Proceedings of the Custom Integrated Circuits Conference

Volumn , Issue , 2009, Pages 73-76

  Patil, Amita C ^a   Fu, Xiao An ^a   Mehregany, Mehran ^a   Garverick, Steven L ^a  

^a Case Western Reserve University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CIRCUIT TECHNOLOGY; COMMON MODE FEEDBACK; CURRENT SOURCES; DIFFERENTIAL MODE; GAIN BANDWIDTH; IC TECHNOLOGY; N-CHANNEL; RESISTOR LOAD; SINGLE STAGE; TWO-STAGE AMPLIFIERS;

DIFFERENTIAL AMPLIFIERS; RESISTORS; SILICON CARBIDE;

INTEGRATED CIRCUITS;

EID: 74049112716     PISSN: 08865930     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/CICC.2009.5280889     Document Type: Conference Paper

References (6)

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2. S. T. Sheppard, et al., "High Temperature Demonstration of a CMOS Operational Amplifier using 6H Silicon Carbide N-Well Technology and ONO Dielectrics," High Temperature Electronics Conference, 2000.
3. D. M. Brown, et al., "Silicon Carbide MOSFET Integrated Circuit Technology," phys. Stat. sol. (a) 162, 459 (1997).
4. P. G. Neudeck, et al., "Stable Electrical Operation of 6H-SiC JFETs and ICs for Thousands of Hours at 500C," Proc. IEEE, vol. 29, (p 456), May 2008.
5. A. C. Patil et al., 6H-SiC JFETs for 450°C Differential Sensing Applications," IEEE/ASM J. MEMS, in press.
6. oC Operation," IEEE Trans. On Components, Hybrids, and Manufacturing Tech. vol. 16, no.5, Aug. 1993.