Fabrication and photovoltaic measurements of surface nanostructure of AlGaInN-based photodetector

Japanese Journal of Applied Physics

Volumn 48, Issue 11, 2009, Pages

  Zhang, Jing ^a   Naoi, Yoshiki ^a   Sakai, Shiro ^a   Fukano, Atsuyuki ^b   Tanaka, Satoru ^b  

^a UNIVERSITY OF TOKUSHIMA   (Japan)

^b SCIVAX Corporation   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAINN; AT-WAVELENGTH; INCIDENT ANGLES; INCIDENT ILLUMINATION; METALORGANIC CHEMICAL VAPOR DEPOSITION; NANO PATTERN; NANOSTRUCTURE DEVICES; PHOTO-VOLTAGE; PHOTOVOLTAIC MEASUREMENTS; SURFACE NANOSTRUCTURE;

FABRICATION; GALLIUM NITRIDE; LITHOGRAPHY; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NANOSTRUCTURES; OPTOELECTRONIC DEVICES; ORGANIC CHEMICALS; ORGANIC LIGHT EMITTING DIODES (OLED); ORGANOMETALLICS; PHOTODETECTORS;

LIGHT EMITTING DIODES;

EID: 73849112079     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.48.111001     Document Type: Article

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