Preparation of highly aligned silicon oxide nanowires with stable intensive photoluminescence

Physica B: Condensed Matter

Volumn 405, Issue 4, 2010, Pages 1176-1180

  Duraia, El Shazly M ^a,b,c   Mansurov, Z A ^b   Tokmolden, S ^c   Beall, Gary W ^d  

^a Suez Canal University   (Egypt)

^b AL FARABI KAZAKH NATIONAL UNIVERSITY   (Kazakhstan)

^c INSTITUTE OF PHYSICS AND TECHNOLOGY   (Kazakhstan)

^d Texas State University   (United States)

Author keywords

FTIR; Photoluminescence; Silicon oxide nanowires

Indexed keywords

EMISSION PEAKS; FTIR; FTIR MEASUREMENTS; GROWTH MECHANISMS; PHOTOLUMINESCENCE MEASUREMENTS; SILICON OXIDE NANOWIRES; STRETCHING VIBRATIONS; VIOLET REGION; X RAY MEASUREMENTS;

FOURIER TRANSFORM INFRARED SPECTROSCOPY; PHOTOLUMINESCENCE; SILICON; SILICON COMPOUNDS; SILICON OXIDES; STRETCHING;

NANOWIRES;

EID: 73749084916     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physb.2009.11.031     Document Type: Article

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