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Physica B: Condensed Matter

Volumn 405, Issue 4, 2010, Pages 1067-1070

Investigation on mild condition preparation and quantum confinement effects in semiconductor nanocrystals of SnO2

(4) Muthuvinayagam, A a Melikechi, N b Dennis Christy, P a Sagayaraj, P a

a LOYOLA COLLEGE (India)

b DELAWARE STATE UNIVERSITY (United States)

Author keywords

Electron microscopy; Nanocrystalline materials; Surface structure; X ray diffraction

Indexed keywords

BAND-GAP VALUES; BULK MATERIALS; CRYSTALLINE NATURE; HRTEM IMAGES; LOW LEVEL; NANO POWDERS; POWDER XRD; QUANTUM CONFINEMENT EFFECTS; QUANTUM DOT; SEM AND TEM; SEMICONDUCTOR NANOCRYSTALS; SPHERICAL MORPHOLOGIES; STRUCTURAL AND MORPHOLOGICAL PROPERTIES; TEM; TETRAGONAL RUTILE STRUCTURE; UV-VIS-NIR ABSORPTION;

AGGLOMERATION; DIFFRACTION; NANOCRYSTALLINE MATERIALS; NANOPARTICLES; NANOSTRUCTURED MATERIALS; OXIDE MINERALS; QUANTUM CONFINEMENT; SEMICONDUCTOR QUANTUM DOTS; SOL-GEL PROCESS; X RAY DIFFRACTION;

SURFACE STRUCTURE;

EID: 73749083746 PISSN: 09214526 EISSN: None Source Type: Journal
DOI: 10.1016/j.physb.2009.10.056 Document Type: Article

Times cited : (14)

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