Enhancement of electroluminescence from TiO2 / p+ -Si heterostructure-based devices through engineering of oxygen vacancies in TiO2

Applied Physics Letters

Volumn 95, Issue 25, 2009, Pages

  Zhang, Yuanyuan ^a   Ma, Xiangyang ^a   Chen, Peiliang ^a   Li, Dongsheng ^a   Pi, Xiaodong ^a   Yang, Deren ^a   Coleman, P G ^b  

^a ZHEJIANG UNIVERSITY   (China)

^b University of Bath   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CONCENTRATION OF; DEFECT ENGINEERING; EXCESS OXYGEN; HETEROSTRUCTURES; PLASMA TREATMENT; TIO;

ARGON; ELECTROLUMINESCENCE; LIGHT; LIGHT EMISSION; OPTOELECTRONIC DEVICES; OXYGEN; PLASMA APPLICATIONS; SILICON;

OXYGEN VACANCIES;

EID: 73449139068     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3276547     Document Type: Article

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17. + -Si heterostructure-based devices based on the energy band diagrams (Fig. S2).