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Applied Physics Letters

Volumn 95, Issue 25, 2009, Pages

Si segregation in polycrystalline Co2 MnSi films with grain-size control

(4) Hirohata, A a Ladak, S a,c Aley, N P a Hix, G B b

a UNIVERSITY OF YORK (United Kingdom)

b NOTTINGHAM TRENT UNIVERSITY (United Kingdom)

c IMPERIAL COLLEGE LONDON (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING TIME; HEUSLER ALLOY FILMS; MNSI FILMS; NANO-METER-SCALE; NEAR ROOM TEMPERATURE; PHASE SEGREGATIONS; POLYCRYSTALLINE; SIZE CONTROL; SPUTTERING SYSTEMS; TUNNELING MAGNETORESISTANCE;

ELECTRIC RESISTANCE; MAGNETIC FIELD EFFECTS; MAGNETORESISTANCE; MANGANESE COMPOUNDS; PHASE SEPARATION; SEGREGATION (METALLOGRAPHY); SILICON;

SILICON ALLOYS;

EID: 73449135458 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3276073 Document Type: Article

Times cited : (17)

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