Characteristics on electrical resistance change of Ag doped chalcogenide thin film application for programmable metallization cell

Journal of Electroceramics

Volumn 23, Issue 2-4, 2009, Pages 322-325

  Choi, Hyuk ^a   Nam, Ki Hyun ^a   Koo, Yong Woon ^a   Chung, Hong Bay ^a  

^a Kwangwoon University   (South Korea)

Author keywords

Ag doped; Amorphous; Chalcogenide; PMC (Programmable Metallization Cell); ReRAM

Indexed keywords

AMORPHOUS CHALCOGENIDE; APPLIED VOLTAGES; CHALCOGENIDE THIN FILMS; ELECTRICAL CHARACTERISTIC; ELECTRICAL RESISTANCE CHANGE; ELECTROCHEMICAL GROWTH; LOW COSTS; LOW CURRENTS; NANO SCALE; NON-VOLATILE; NON-VOLATILE MEMORY APPLICATION; PROGRAMMABLE METALLIZATION CELLS; RANDOM ACCESS MEMORIES; RESISTANCE CHANGE; REVERSIBLE RESISTANCE CHANGES; RFID CHIPS; SENSING MARGIN; THIN-FILM STRUCTURE;

METALLIZING; RANDOM ACCESS STORAGE; SEMICONDUCTING SELENIUM COMPOUNDS; SOLID ELECTROLYTES; THIN FILM DEVICES; THIN FILMS;

SILVER;

EID: 73449103926     PISSN: 13853449     EISSN: 15738663     Source Type: Journal    
DOI: 10.1007/s10832-008-9448-8     Document Type: Article

References (8)

1. H.B. Chung C.Y. Park 1979 Electrical properties of amorphous chalcogenide thin film interface J. KIEE. 29 111
2. H.Y. Lee S.H. Park J.Y. Chun H.B. Chung 1998 Photo-induced transformation in amorphous Se75Ge25 thin films by XeCl excimer laser exposure J. Appl. Phys. 83 5381 10.1063/1.367367 1:CAS:528:DyaK1cXislyqtbw%3D 1998JAP....83.5381L
3. R. Neale, D. Nelson, G. Moore, Nonvolatile and reprogrammable, the ready-mostly memory is here. Electronics, 56-60 (1970)
4. 2 thin films Trans. Electr. Electron. Mater. 5 241
5. J.I. Park J.T. Lee C.H. Yeo Y.J. Lee J.B. Kim H.B. Chung 2003 Polarization dependence of holographic grating in chalcogenide film Jpn. J. Appl. Phys. 42 5090 10.1143/JJAP.42.5090 1:CAS:528:DC%2BD3sXmvFGktro%3D 2003JaJAP..42.5090P
6. C.H. Yeo K.N. Lee K. Shin J.B. Kim H.B. Chung 2005 Electrical erasing of holographic grating in amorphous chalcogenide thin film Jpn. J. Appl. Phys. 44 5769 10.1143/JJAP.44.5769 1:CAS:528:DC%2BD2MXpsFCls78%3D 2005JaJAP..44.5769Y (Pubitemid 43185960)
7. R. Symanczyk, et al, Electrical characterization of solid state ionic memory elements, in Proceedings of the Non-volatile Memory Technical Symposium, Oct, 2003
8. G. Muller, T. Happ, M. Kund, G.Y. Lee, N. Nagel, R. Sezi, Status and outlook of emerging nonvolatile memories, in IEDM Technical Digest, pp. 567-570 (2004)