Hall effect and electronic structure of Co2 Fex Mn1 - x Si films

Journal of Magnetism and Magnetic Materials

Volumn 322, Issue 6, 2010, Pages 579-584

  Schneider, H ^a   Vilanova Vidal, E ^a   Chadov, S ^a   Fecher, G H ^a   Felser, C ^a   Jakob, G ^a  

^a JOHANNES GUTENBERG UNIVERSITY   (Germany)

Author keywords

Electronic structure; Hall effect; Heusler compound; Magnetic thin film

Indexed keywords

ANOMALOUS HALL EFFECTS; BAND STRUCTURE CALCULATION; CONDUCTION BAND EDGE; EXPERIMENTAL DATA; FERMI ENERGY; HALF-METALLICITY; HEUSLER COMPOUND; HIGH QUALITY; MINORITY BANDS; MODEL SYSTEM; ROOM TEMPERATURE; SI FILMS; SIGN-CHANGE; VALENCE BAND EDGES;

BAND STRUCTURE; ELECTRIC CURRENTS; ELECTRON MOBILITY; ELECTRONIC PROPERTIES; ELECTRONIC STRUCTURE; EPITAXIAL FILMS; FERMI LEVEL; FERMIONS; GYRATORS; HALL EFFECT; MAGNETIC DEVICES; MAGNETIC FILMS; MAGNETIC THIN FILMS; MANGANESE; MANGANESE COMPOUNDS; THIN FILM DEVICES;

MAGNETIC FIELD EFFECTS;

EID: 73449103223     PISSN: 03048853     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jmmm.2009.09.048     Document Type: Article

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