Catalytic synthesis of ZnO nanorods on patterned silicon wafer-An optimum material for gas sensor

Bulletin of Materials Science

Volumn 32, Issue 5, 2009, Pages 493-498

  Panda, S K ^a   Jacob, C ^a  

^a INDIAN INSTITUTE OF TECHNOLOGY   (India)

Author keywords

Anisotropic etching; Catalytic growth; Nanorods; Patterned wafer; Sensor material; Surface enhanced raman scattering

Indexed keywords

CATALYTIC GROWTH; CATALYTIC SYNTHESIS; GAS SENSORS; KOH SOLUTION; OVER-ETCH; PATTERNED SILICON; PATTERNED WAFERS; ROOM-TEMPERATURE PHOTOLUMINESCENCE; SENSOR MATERIAL; SENSOR MATERIALS; SI(110); SILVER CATALYST; SILVER THIN FILMS; SURFACE AREA; TWO-STEP PROCESS; ZNO; ZNO FILMS; ZNO NANOROD;

ANISOTROPIC ETCHING; ANISOTROPY; ANNEALING; CATALYSIS; CATALYSTS; DEPOSITION; FILM GROWTH; GAS DETECTORS; NANORODS; OPTICAL MICROSCOPY; PHOTOLUMINESCENCE SPECTROSCOPY; RAMAN SCATTERING; RAMAN SPECTROSCOPY; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING SILICON COMPOUNDS; SENSORS; SILICON; SILICON WAFERS; SILVER; SYNTHESIS (CHEMICAL); THERMAL EVAPORATION; THIN FILM DEVICES; THIN FILMS; X RAY DIFFRACTION ANALYSIS; ZINC; ZINC OXIDE;

SURFACES;

EID: 73349108455     PISSN: 02504707     EISSN: None     Source Type: Journal    
DOI: 10.1007/s12034-009-0073-1     Document Type: Article

References (33)

1. Ahn S E, Ji H J, Kim K and Kim G T 2007 Appl. Phys. Lett. 90 153106.
2. Alim K A, Fonoberov V A, Shamsa M and Balandin A A 2005 J. Appl. Phys. 97 124313.
3. Choopun S, Hongsith N, Mangkorntong P and Mangkorntong N 2007 Physica E39 53.
4. Damen T C, Porto S P S and Tell B 1966 Phys. Rev. 142 570.
5. Gao T and Wang T H 2005 Appl. Phys. A80 1451.
6. Hoefer U, Frank J and Fleischer M 2001 Sens. Actuators B78 6.
7. Hongsith N, Viriyaworasakul C, Mangkorntong P, Mangkorntong N and Choopun S 2008 Ceram. Int. 34 823.
8. Hsueh T J, Chen Y W, Chang S J, Wang S F, Hsu C L, Lin Y R, Lin T S and Chen I C 2007 Sens. Actuators B125 498.
9. Hu J Q, Ma X L, Xie Z Y, Wong N B, Lee C S and Lee S T 2001 Chem. Phys. Lett. 344 97.
10. Kim K K, Song J H, Jung H J and Park S J 2000 J. Appl. Phys. 87 3573.
11. Kirkham M, Wang X, Wang Z L and Snyder R L 2007 Nanotechnol. 18 365304.
12. Li C, Hou K, Lei W, Zhang X and Wang B 2007a Appl. Phys. Lett. 91 163502.
13. Li C, Fang G, Guan W and Zhao X 2007b Mater. Lett. 61 3310.
14. Massalski T B (ed.) 1990 Binary alloy phase diagram (Materials Park, OH: ASM International), 2nd edn, Vol. 1, p 118.
15. Mitra P, Chatterjee A P and Maity H S 1998 Mater. Lett. 35 33.
16. Panda S K, Singh N, Hooda J and Jacob C 2008 Cryst. Res. Technol. 43 751.
17. Panda S K, Singh N, Pal S and Jacob C 2009 J. Mater. Sci.-Mater. Electron. 20 771.
18. Park J Y, Yen Y S, Hong Y S, Oh H, Kim J J and Kim S S 2006 Composites: Part B 37 408.
19. Rao B B 2000 Mater. Chem. Phys. 64 62.
20. Reynolds D C, Look D C and Jogai B 1996 Solid State Commun. 99 873.
21. Rout C S, Hari Krishna S, Vivekchand S R C, Govindaraj A and Rao C N R 2006a Chem. Phys. Lett. 418 586.
22. Rout C S, Raju A R, Govindaraj A and Rao C N R 2006b Solid State Commun. 138 136.
23. Ruiz A M, Sakai G, Cornet A, Shimanoe K, Morante J R and Yamazoe N 2003 Sens. Actuators B93 509.
24. Sarala Devi G, Bala Subrahmanyam V, Gadkari S C and Gupta S K 2006 Anal. Chim. Acta 568 41.
25. Shalish I, Temkin H and Narayanamurti V 2004 Phys. Rev. B69 245401.
26. Shishiyanu S T, Shishiyanu T S and Lupan O I 2005 Sens. Actuators B107 379.
27. Sun Z P, Liu L, Zhang L and Jia D Z 2006 Nanotechnol. 17 2266.
28. Vanheusden K, Warren W L, Seager C H, Tallant D R, Voigt J A and Gnade B E 1996 J. Appl. Phys. 79 7983.
29. Vo-Dinh T, Miller G H, Bello J, Johnson R, Moody R L and Alak A 1989 Talanta 36 227.
30. Wang X, Zhang J, Zhu Z and Zhu J 2007 Appl. Surf. Sci. 253 3168.
31. Xu J, Shun Y, Pan Q and Qin J 2000 Sens. Actuators B66 161.
32. Zhang Y, Yu K, Jiang D, Zhu Z, Geng H and Luo L 2005 Appl. Surf. Sci. 242 212.
33. Zhang Z Z et al 2007 J. Cryst. Growth 301-302 362.