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Volumn 116, Issue 5, 2009, Pages 859-861
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Electrical properties of anisotype ZnO/ZnSe heterojunctions
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Author keywords
[No Author keywords available]
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Indexed keywords
CURRENT VOLTAGE CHARACTERISTICS;
SEMICONDUCTOR JUNCTIONS;
ZINC OXIDE;
AVALANCHE EFFECTS;
FORWARD CURRENTS;
PHOTO-THERMAL OXIDATION;
POTENTIAL BARRIER HEIGHT;
RECOMBINATION PROCESS;
SPACE CHARGE REGIONS;
TEMPERATURE COEFFICIENT;
TUNNELING PROCESS;
HETEROJUNCTIONS;
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EID: 72949096339
PISSN: 05874246
EISSN: 1898794X
Source Type: Journal
DOI: 10.12693/APhysPolA.116.859 Document Type: Conference Paper |
Times cited : (11)
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References (7)
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