Analysis on the potential of Silicon Carbide MOSFETs and other innovative semiconductor technologies in the photovoltaic branch

2009 13th European Conference on Power Electronics and Applications, EPE '09

Volumn , Issue , 2009, Pages

  Araújo, Samuel Vasconcelos ^a   Zacharias, Peter ^a  

^a UNIVERSITY OF KASSEL   (Germany)

Author keywords

MOSFET; Photovoltaic; Power semiconductor device; Silicon Carbide; Voltage source inverter (VSI)

Indexed keywords

DISCRETE ELEMENTS; INVERTER CIRCUIT; MOS-FET; PHOTOVOLTAIC; PHOTOVOLTAIC POWER; PHOTOVOLTAIC SYSTEMS; SEMICONDUCTOR TECHNOLOGY; SIC DEVICES; SILICON CARBIDE MOSFETS; VOLTAGE SOURCE INVERTER;

MOSFET DEVICES; PHOTOLITHOGRAPHY; POWER ELECTRONICS; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR SWITCHES; SILICON CARBIDE;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 72949083524     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (18)

1. Meinhard M. Burger. B. and Engler A. : PV-Sytemtehcnik - Motor der Kostenreduktion für die photovoltaische Stromerzeugung, FVS-BSW Solar, Themen 2007
2. Zacharias P. : Perspectives of SiC power devices in highly efficient renewable energy conversion systems, 7th European Confrence on Silicon Carbide and related materials, 2008
3. Briere M. A. : GaN based power conversion: a new era in power electronics, PCIM Europe 2009
4. th International Symposium on Power Semiconductor Devices & IC's, 2008
5. Föll H. : Comparison of SiC to other Semiconductors, available at http://www.tf.unikiel.de/matwis/amat/semi-en/kap-a/illustr/ia-1-2.html
6. Powell A. R. and Rowland L. B. : SiC Materials - Progress, Status and potential roadblocks, Proceedings of the IEEE , vol.90, no.6, pp. 942-955, Jun. 2002.
7. J.W. Palmour, S.H. Ryu, Q. Zhang and L. Cheng, "Silicon Carbide Switching Devices: Pros and Cons for MOSFETs, JFETs and BJTs", PCIM 2009, Nurnberg, 2009.
8. Zhang J. et al. : 4H-SiC Bipolar Junction Transistors with a Current Gain of 108, Materials Science Forum Volmues 600-603 (2009), pp. 1159
9. S. Ryu et al. : 4H-SiC Power DMOSFETs - Performance and Reliability, Materials Research Society Meeting Fall 2008
10. Asano K. et al., "5.5 kV normally-off low RonS 4H-SiC SEJFET, " ISPSD '01, pp.23-26, 2001
11. Kelley R., Rees F. and Schwob D. :Optimized Gate Driver for Enhancement-mode SiC JFET", PCIM Europe 2009
12. Falk A., Meinhardt M. and Wachenfeld V. :Efficiency and grid compatibility of photovoltaic inverters - stateof-the-art and future trends, PCIM Europe 2009
13. Burger B., Kranzer D. and Stalter O. : Cost Reduction of PV-inverters with SiC-DMOSFETs, 5th International Conference on Integrated Power Electronics Systems 2008
14. Burger B., Laukamp H. and Schmidt H. : Höhere Systemwirkungsgrade in dreiphasigen Anlagen durch Systemspannungen größer als 1000V, 23. Symposium Photovoltaische Solarenergie 2008
15. Huber L., Jang Y. and Jovanovic M. M.: Performance Evaluation of Bridgeless, IEEE Transactions on Power Electronics, vol. 23, no. 3, May 2008
16. Araújo S.V., Zacharias P. and Mallwitz R.: Highly Efficient Single-Phase Transformerless Inverters for Grid-Connected Photovoltaic Systems - IEEE Transactions on Industrial Electronic.
17. Schmidt H., Burger B. and Kiefer K. : Welcher Wechselrichter für welche Modultechnologie?, 21. Symposium Photovoltaische Solarenergie, 2006
18. Ueda Y., Kurokawa K., Tanabe T., Kitamura K., Sugihara, H. :Analysis Results of Output Power Loss Due to the Grid Voltage Rise in Grid-Connected Photovoltaic Power Generation Systems, IEEE Transactions on Industrial Electronics, , vol.55, no.7, pp.2744-2751, July 2008