A novel bias temperature instability characterization methodology for high-k MOSFETs

ESSDERC 2006 - Proceedings of the 36th European Solid-State Device Research Conference

Volumn , Issue , 2006, Pages 387-390

  Heh, Dawei ^a   Bersuker, Gennadi ^a   Choi, Rino ^a   Young, Chadwin D ^a   Lee, Byoung Hun ^b  

^a SEMATECH   (United States)

^b IBM   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

MOSFET DEVICES; RELAXATION PROCESSES; STRESS ANALYSIS; THRESHOLD VOLTAGE;

BIAS TEMPERATURE INSTABILITY (BTI); CONSTANT VOLTAGE CHARGING; VOLTAGE INSTABILITY;

TEMPERATURE MEASUREMENT;

EID: 72849123619     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ESSDER.2006.307719     Document Type: Conference Paper

References (10)

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10. G. Bersuker et al., IRPS p. 179, 2006.