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Volumn 312, Issue 3, 2010, Pages 437-442

Structural and electrical properties of single crystal indium doped ZnO films synthesized by low temperature solution method

Author keywords

A1. Doping; A2. Growth from solution; B1. Zinc compound

Indexed keywords

A1. DOPING; CRYSTAL QUALITIES; CRYSTALLINITIES; ELECTRICAL MEASUREMENT; ELECTRICAL PROPERTY; ELECTRON CONCENTRATION; GRAIN SIZE; GROWTH FROM SOLUTION; GROWTH SOLUTIONS; HALL MEASUREMENTS; INDIUM CHLORIDE; INDIUM DOPANTS; INDIUM DOPING; INDIUM-DOPED ZNO; LOW TEMPERATURE SOLUTIONS; LOW TEMPERATURES; SINGLE-CRYSTAL FILMS; STRUCTURAL AND ELECTRICAL PROPERTIES; ZNO FILMS;

EID: 72549107315     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2009.10.062     Document Type: Article
Times cited : (24)

References (13)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.