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Volumn 312, Issue 3, 2010, Pages 437-442
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Structural and electrical properties of single crystal indium doped ZnO films synthesized by low temperature solution method
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Author keywords
A1. Doping; A2. Growth from solution; B1. Zinc compound
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Indexed keywords
A1. DOPING;
CRYSTAL QUALITIES;
CRYSTALLINITIES;
ELECTRICAL MEASUREMENT;
ELECTRICAL PROPERTY;
ELECTRON CONCENTRATION;
GRAIN SIZE;
GROWTH FROM SOLUTION;
GROWTH SOLUTIONS;
HALL MEASUREMENTS;
INDIUM CHLORIDE;
INDIUM DOPANTS;
INDIUM DOPING;
INDIUM-DOPED ZNO;
LOW TEMPERATURE SOLUTIONS;
LOW TEMPERATURES;
SINGLE-CRYSTAL FILMS;
STRUCTURAL AND ELECTRICAL PROPERTIES;
ZNO FILMS;
CARRIER MOBILITY;
CHLORINE COMPOUNDS;
DOPING (ADDITIVES);
ELECTRIC PROPERTIES;
FILM GROWTH;
HYDROTHERMAL SYNTHESIS;
LIGHT EMITTING DIODES;
METALLIC FILMS;
PHYSICAL OPTICS;
SEMICONDUCTING ZINC COMPOUNDS;
SINGLE CRYSTALS;
SURFACE ROUGHNESS;
TRANSITION METAL COMPOUNDS;
ZINC;
ZINC OXIDE;
INDIUM;
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EID: 72549107315
PISSN: 00220248
EISSN: None
Source Type: Journal
DOI: 10.1016/j.jcrysgro.2009.10.062 Document Type: Article |
Times cited : (24)
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References (13)
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