InP-based photodetector bonded on CMOS with Si3N4 interconnect waveguides

Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS

Volumn , Issue , 2009, Pages 139-140

  Binetti, P R A ^a   Leijtens, X J M ^a   Ripoll, A Morant ^a   De Vries, T ^a   Smalbrugge, E ^a   Oei, Y S ^a   Di Cioccio, L ^b   Fedeli, J M ^b   Lagahe, C ^c   Orobtchouk, R ^d   Van Thourhout, D ^e   Van Veldhoven, P J ^a   Notzel R ^a   Smit, M K ^a  

^a EINDHOVEN UNIVERSITY OF TECHNOLOGY   (Netherlands)

^b CEA LETI   (France)

^c TRACIT Technologies   (France)

^d UNIVERSITÉ DE LYON   (France)

^e GHENT UNIVERSITY   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; III-V SEMICONDUCTORS; INDIUM PHOSPHIDE; PHOTODETECTORS; PHOTONS; SEMICONDUCTING INDIUM PHOSPHIDE; WAFER BONDING; WSI CIRCUITS;

CMOS WAFERS; DETECTOR FABRICATION; FUTURE GENERATIONS; INP BASED PHOTODETECTOR; INTEGRATION TECHNOLOGIES; INTERCONNECT WAVEGUIDES; PHOTONIC CIRCUITS; WAFER-SCALE PROCESSING;

SILICON COMPOUNDS;

EID: 72549089091     PISSN: 10928081     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/LEOS.2009.5343085     Document Type: Conference Paper

References (4)

1. International Technology Roadmap for Semiconductors (ITRS), http://public.itrs.net.
2. P. Binetti, X. Leijtens, T. de Vries, Y. Oei, O. Raz, L. Di Cioccio, J.-M. Fedeli, C. Lagahe, R. Orobtchouk, J. Van Campenhout, D. Van Thourhout, P. van Veldhoven, R. Nötzel, and M. Smit, "Indium phosphide based membrane photodetector for optical interconnects on silicon," in Proc. IEEE/LEOS Annual Meeting (LEOS '08). Newport Beach, CA, USA, Nov. 2008, pp. 302-303.
3. B. Han, R. Orobtchouk, T. Benyattou, P. Binetti, S. Jeannot, J.-M. Fedeli, and X. Leijtens, "Comparison of optical passive integrated devices based on three materials for optical clock distribution," in Proc. 13th Eur. Conf. on Int. Opt. (ECIO '07). Copenhagen, Denmark, April 25-27 2007, p. ThF3, http://ecio-conference.org.
4. L. Di Cioccio, "New result obtained at LETI on 3D heterostructures," in Abstracts in 210th Meeting of the Electrochemical Society. Cancun, Mexico, Oct. 29 - Nov. 3 2006, pp. 602, Abstract No.1649.