S-band discrete and MMIC GaN power amplifiers

European Microwave Week 2009, EuMW 2009: Science, Progress and Quality at Radiofrequencies, Conference Proceedings - 4th European Microwave Integrated Circuits Conference, EuMIC 2009

Volumn , Issue , 2009, Pages 495-498

  Nilsson, Joakim ^a   Billström, Niklas ^a   Rorsman, Niklas ^b   Romanini, Paolo ^c  

^a SAAB AB   (Sweden)

^b CHALMERS UNIVERSITY OF TECHNOLOGY   (Sweden)

^c SELEX SISTEMI INTEGRATI   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

GAN HEMTS; GAN POWER AMPLIFIER; GATE WIDTHS; HIGH POWER AMPLIFIER; MICROWAVE POWER AMPLIFIER; MMIC POWER AMPLIFIER; OUTPUT STAGES;

GALLIUM ALLOYS; GALLIUM NITRIDE; HIGH ELECTRON MOBILITY TRANSISTORS; INTEGRATED CIRCUITS; MICROWAVE AMPLIFIERS; MICROWAVE CIRCUITS; MICROWAVE INTEGRATED CIRCUITS; MICROWAVES; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; SEMICONDUCTING GALLIUM;

POWER AMPLIFIERS;

EID: 72449166424     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (2)

1. Project number RTP 102.052 within EDA
2. M. Südow, M. Fagerlind, M. Thorsell, K. Andersson, N. Billström, P.- Å. Nilsson and N. Rorsman, "An AlGaN/GaN HEMT Based Microstrip MMIC Process for Advanced Transceiver Design", IEEE Transactions on Microwave Theory and Techniques, Volume 56, pp.1827 - 1833, 2008.