Nanosecond pHEMT switches

European Microwave Week 2009, EuMW 2009: Science, Progress and Quality at Radiofrequencies, Conference Proceedings - 4th European Microwave Integrated Circuits Conference, EuMIC 2009

Volumn , Issue , 2009, Pages 13-16

  Freeston, Andrew ^a   Varmazis, Costas ^a   Boles, Timothy ^a  

^a M/A COM   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRITICAL PARAMETER; GALLIUM ARSENIDE; HIGH BANDWIDTH; LAG TIME; PHEMT TECHNOLOGY;

ARSENIC COMPOUNDS; GALLIUM; GALLIUM ALLOYS; GALLIUM COMPOUNDS; INTEGRATED CIRCUITS; MICROWAVE INTEGRATED CIRCUITS; SEMICONDUCTING GALLIUM; SWITCHES;

MICROWAVES;

EID: 72449129436     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (3)

1. th IEEE International Symposium on Electron Devices and Optoelectronic Applications, EDMO 2002, pp. 63-68
2. Dhar, S.; Balakrishman, V.R.; Kumar, V.; Ghosh, S.,"Determination of energetic distribution of interface states between gate metal and semiconductor in sub-micron devices from current-voltage characteristics," IEEE Transactions on Electron Devices, vol. 47, Issue 2, pp 282-287, Feb. 2000.
3. Freeston, A., "Understanding Gate Lag and How it Differs From Switching Speed," Microwave Product Digest, Sept. 2008