Grain growth enhancement and Ga distribution of Cu (In0.7Ga 0.3)Se2 Film Using Cu2Se layer on Cu-In-Ga metal precursor

Journal of the Electrochemical Society

Volumn 157, Issue 1, 2010, Pages

  Kim, Min Sik ^a,c   Chalapathy, R B V ^a   Yoon, Kyung Hoon ^b   Ahn, Byung Tae ^a  

^a Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

^b Korea Institute of Energy Research (KIER)   (South Korea)

^c SK Energy Corporation   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CELL EFFICIENCY; CIGS FILMS; FILL FACTOR; GA METAL; GRAIN GROWTH BEHAVIOR; LARGE-GRAIN; PRECURSOR LAYER; STACKED PRECURSORS;

COPPER COMPOUNDS; GALLIUM; GRAIN GROWTH; GRAIN SIZE AND SHAPE; OPEN CIRCUIT VOLTAGE; PHASE INTERFACES; SEGREGATION (METALLOGRAPHY);

COPPER;

EID: 72249110703     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.3258660     Document Type: Article

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