The atomistic mechanism of high temperature contact line advancement: Results from molecular dynamics simulations

Journal of Physics Condensed Matter

Volumn 21, Issue 46, 2009, Pages

  Sun, Y ^a   Webb III, E B ^b  

^a DREXEL UNIVERSITY   (United States)

^b SANDIA NATIONAL LABORATORIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC POSITIONS; ATOMIC SCALE; ATOMIC SCALE PHENOMENA; ATOMIC TRAJECTORIES; ATOMISTIC MECHANISM; COMPUTING FLOWS; CONTACT LINE REGIONS; CONTACT LINES; FLOW MECHANISMS; HIGH TEMPERATURE; HOMOLOGOUS TEMPERATURE; LIQUID/VAPOR INTERFACES; MOLECULAR DYNAMICS SIMULATIONS; MOLECULAR-KINETIC THEORY; NEW MATERIAL; NI SUBSTRATES; REACTIVE WETTING; SOLID/LIQUID INTERFACES; TRANSPORT MECHANISM;

MOLECULAR DYNAMICS; SIGNAL TRANSDUCTION; SILVER; SURFACE TENSION; WETTING;

ATOMS;

EID: 72249089543     PISSN: 09538984     EISSN: 1361648X     Source Type: Journal    
DOI: 10.1088/0953-8984/21/46/464135     Document Type: Article

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