Fabrication of SnO2 one-dimensional nanosturctures with graded diameters by chemical vapor deposition method

Journal of Crystal Growth

Volumn 312, Issue 2, 2010, Pages 220-225

  Yu, Fang ^a   Tang, Dongsheng ^a   Hai, Kuo ^a   Luo, Zhihua ^a   Chen, Yaqi ^a   He, Xiongwu ^a   Peng, Yuehua ^a   Yuan, Huajun ^a   Zhao, Ding ^a   Yang, Yi ^a  

^a BEIJING UNIVERSITY OF POSTS AND TELECOMMUNICATIONS   (China)

Author keywords

A1. Nanostructures; A3. Chemical vapor deposition; B1. Nanomaterials; B1. Processes; B2. Semiconducting materials

Indexed keywords

1D NANOSTRUCTURES; A1. NANOSTRUCTURES; B1. PROCESSES; BAND GAPS; CHEMICAL VAPOR DEPOSITION METHODS; GROWTH CHAMBER; GROWTH CONDITIONS; GROWTH DIRECTIONS; GROWTH MECHANISMS; GROWTH PROCESS; INTERSTITIAL ATOMS; MONO-DISPERSED; NANO-MATERIALS; OXYGEN GAS; OXYGEN PARTIAL PRESSURE; SEMICONDUCTING MATERIALS; SOURCE MATERIAL;

CHEMICAL VAPOR DEPOSITION; ELECTRIC WIRE; ENERGY GAP; NANOSTRUCTURED MATERIALS; NANOWIRES; OXYGEN; PARTIAL PRESSURE; POSITIVE IONS; SEMICONDUCTOR GROWTH; TIN;

OXYGEN VACANCIES;

EID: 71649115034     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2009.10.052     Document Type: Article

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