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Volumn 80, Issue 15, 2009, Pages

Ionization equilibrium in an excited semiconductor: Mott transition versus Bose-Einstein condensation

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EID: 71449123908     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.80.155201     Document Type: Article
Times cited : (78)

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