Predicting the ionization threshold for carriers in excited semiconductors

Solid State Communications

Volumn 146, Issue 1-2, 2008, Pages 73-77

  Snoke, David ^a  

^a UNIVERSITY OF PITTSBURGH   (United States)

Author keywords

A. Semiconductors; D. Exciton; D. Mott transition; D. Plasma

Indexed keywords

EXCITONS; HOLE MOBILITY; PHASE TRANSITIONS; PHOTOEXCITATION; SEMICONDUCTOR QUANTUM WELLS;

DOUBLE QUANTUM WELLS; IONIZATION THRESHOLD; IONIZED CARRIERS; MOTT TRANSITIONS;

CHARGE CARRIERS;

EID: 40249111497     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ssc.2008.01.012     Document Type: Article

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