Design and modeling of a lateral a-Se MSM photoconductor as indirect conversion X-ray imager

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 7449, Issue , 2009, Pages

  Wang, Kai ^a,b   Chen, Feng ^a   Belev, George ^c   Kasap, Safa O ^c   Karim, Karim S ^a  

^a UNIVERSITY OF WATERLOO   (Canada)

^b Thunder Bay Regional Research Institute   (Canada)

^c UNIVERSITY OF SASKATCHEWAN   (Canada)

Author keywords

Amorphous selenium; Indirect conversion X ray imager; Metal semiconductor metal photoconductor

Indexed keywords

AMORPHOUS SELENIUM; BLUE-EMITTING; BOTTOM ELECTRODES; DESIGN AND MODELING; DIRECT CONVERSION; EXTERNAL QUANTUM EFFICIENCY; FALL TIME; LATERAL ELECTRODES; LOW LEVEL; METAL SEMICONDUCTOR METAL; METAL-SEMICONDUCTOR-METAL STRUCTURES; MSM STRUCTURES; PHOTOCONDUCTOR LAYERS; PHOTOLITHOGRAPHY PROCESS; PHOTORESPONSES; RESPONSIVITY; RISETIMES; SCINTILLATOR MATERIALS; SHORT WAVELENGTHS; SIMULATION RESULT; THIN LAYERS; TIME CONSTANTS; VERTICAL STRUCTURES; X-RAY DETECTIONS; X-RAY IMAGERS;

ELECTRIC FIELDS; ELECTRODES; IMAGE SENSORS; METALS; NEUTRON DETECTORS; PHOTODETECTORS; SELENIUM; SEMICONDUCTING SELENIUM COMPOUNDS; SEMICONDUCTOR QUANTUM DOTS; STRUCTURAL METALS; X RAY ANALYSIS; X RAYS;

GAMMA RAYS;

EID: 71449121999     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.829299     Document Type: Conference Paper

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