Comparing the weak and strong gate-coupling regimes for nanotube and graphene transistors

Physica Status Solidi - Rapid Research Letters

Volumn 3, Issue 6, 2009, Pages 190-192

  Heller, I ^a   Chatoor, S ^a   Mannik J ^a   Zevenbergen, M A G ^a   Dekker, C ^a   Lemay, S G ^a  

^a DELFT UNIVERSITY OF TECHNOLOGY   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

BACK GATES; BACK-GATE; ELECTRONIC TRANSPORT; GATE DEPENDENCE; GRAPHENE TRANSISTORS; GRAPHENES; INDUCED CHARGES; LEVEL SHIFT; NON-LINEARITY; STRONG AND WEAK COUPLING;

CARBON NANOTUBES; GRAPHITE; LIQUIDS; MESFET DEVICES;

FIELD EFFECT TRANSISTORS;

EID: 71149111873     PISSN: 18626254     EISSN: 18626270     Source Type: Journal    
DOI: 10.1002/pssr.200903157     Document Type: Article

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