Room temperature InGaAs-AlAsSb quantum cascade lasers operating in 3-4 μm range

2009 Conference on Lasers and Electro-Optics and 2009 Conference on Quantum Electronics and Laser Science Conference, CLEO/QELS 2009

Volumn , Issue , 2009, Pages

  Revin, D G ^a   Zhang, S Y ^a   Commin, J P ^a   Cockburn, J W ^a   Kennedy, K ^a   Krysa, A B ^a   Hopkinson, M ^a  

^a UNIVERSITY OF SHEFFIELD   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM ARSENIDE; GALLIUM COMPOUNDS; III-V SEMICONDUCTORS; QUANTUM CASCADE LASERS; SEMICONDUCTING INDIUM; SEMICONDUCTING INDIUM GALLIUM ARSENIDE;

ACTIVE REGIONS; OPTICAL POWER; SELECTIVE INCORPORATIONS; STRAIN-COMPENSATED;

ELECTRON OPTICS;

EID: 71049168725     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1364/cleo.2009.cthaa5     Document Type: Conference Paper

References (3)

1. D.G. Revin, J.W. Cockburn, M.J. Steer, R.J. Airey, M. Hopkinson, A.B. Krysa, L.R. Wilson, S. Menzel, "InGaAs/AlAsSb/InP quantum cascade lasers operating at wavelengths close to 3 μm", Appl. Phys. Lett. 90, 021108 (2007).
2. D.G. Revin, J.W. Cockburn, M.J. Steer, R.J. Airey, M. Hopkinson, A.B. Krysa, L.R. Wilson, S. Menzel, "InGaAs/AlAsSb/InP strain compensated quantum cascade lasers" Appl. Phys. Lett. 90, 151105 (2007).
3. 0.33/InP quantum cascade lasers by introduction of AlAs barriers in the laser active regions," Appl. Phys. Lett. 91, 051123 (2007).