Improved performance of In0.6Ga0.4As/AlAs 0.67Sb0.33/InP quantum cascade lasers by introduction of AlAs barriers in the active regions

Applied Physics Letters

Volumn 91, Issue 5, 2007, Pages

  Revin, D G ^a   Cockburn, J W ^a   Steer, M J ^a   Airey, R J ^a   Hopkinson, M ^a   Krysa, A B ^a   Wilson, L R ^a   Menzel, S ^a  

^a UNIVERSITY OF SHEFFIELD   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

DIFFUSION; INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS; WAVELENGTH;

BARRIER INTERFACES; COMPOSITIONAL FLUCTUATIONS; INTERDIFFUSION; LASER ACTIVE REGIONS; QUANTUM CASCADE LASERS (QCL);

SEMICONDUCTOR LASERS;

EID: 34547653777     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2767767     Document Type: Article

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