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Volumn , Issue , 2002, Pages 111-114
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Some possibilities for determining the depth of the p-n junction and profiles of semiconductor layers
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Author keywords
[No Author keywords available]
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Indexed keywords
CAPACITANCE;
MICROSYSTEMS;
SEMICONDUCTOR DEVICES;
SILICON WAFERS;
CARRIER-PROFILE;
ELECTROCHEMICAL CAPACITANCE VOLTAGE;
FOUR-POINT PROBE METHOD;
P+-N JUNCTIONS;
P-N JUNCTION;
SEMICONDUCTOR LAYERS;
SEMICONDUCTOR JUNCTIONS;
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EID: 84964285735
PISSN: None
EISSN: None
Source Type: Conference Proceeding
DOI: 10.1109/ASDAM.2002.1088488 Document Type: Conference Paper |
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Times cited : (1)
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References (5)
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