A metallic-CNT-tolerant carbon nanotube technology using asymmetrically-correlated CNTs (ACCNT)

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 2009, Pages 182-183

  Lin, Albert ^a   Patil, Nishant ^a   Wei, Hai ^a   Mitra, Subhasish ^a   Wong, H S Philip ^a  

^a STANFORD UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALIGNED CARBON NANOTUBES; CARBON NANOTUBE FIELD EFFECT TRANSISTORS; CARBON NANOTUBE TECHNOLOGY; DESIGN METHODOLOGY; HIGH CURRENTS; TEST STRUCTURE;

CARBON NANOTUBES;

FIELD EFFECT TRANSISTORS;

EID: 71049121054     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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