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Volumn 52, Issue 6, 2009, Pages 322-325
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Type II strained layer superlattice: A potential future IR solution
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Author keywords
HgCdTe; Infrared photodetectors; Minority carrier lifetime; Quantum well infrared photodetectors; Type II strained layer superlattice
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Indexed keywords
HGCDTE;
INFRARED PHOTODETECTOR;
MINORITY CARRIER LIFETIMES;
QUANTUM WELL INFRARED PHOTODETECTORS;
STRAINED LAYER SUPERLATTICE;
TYPE II;
CADMIUM;
INFRARED DETECTORS;
MERCURY (METAL);
MERCURY COMPOUNDS;
OPTOELECTRONIC DEVICES;
SEMICONDUCTING ALUMINUM COMPOUNDS;
SEMICONDUCTOR QUANTUM WELLS;
SUPERLATTICES;
CARRIER LIFETIME;
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EID: 70849113826
PISSN: 13504495
EISSN: None
Source Type: Journal
DOI: 10.1016/j.infrared.2009.05.028 Document Type: Article |
Times cited : (39)
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References (10)
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