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Volumn 52, Issue 6, 2009, Pages 322-325

Type II strained layer superlattice: A potential future IR solution

Author keywords

HgCdTe; Infrared photodetectors; Minority carrier lifetime; Quantum well infrared photodetectors; Type II strained layer superlattice

Indexed keywords

HGCDTE; INFRARED PHOTODETECTOR; MINORITY CARRIER LIFETIMES; QUANTUM WELL INFRARED PHOTODETECTORS; STRAINED LAYER SUPERLATTICE; TYPE II;

EID: 70849113826     PISSN: 13504495     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.infrared.2009.05.028     Document Type: Article
Times cited : (39)

References (10)
  • 1
    • 43249097510 scopus 로고    scopus 로고
    • P.Y. Delaunay, M. Razeghi, in: SPIE Photonic West Proceedings - Quantum Sensing and Nanophotonic Devices V, 6900, (2008) p. 69000M-1-69000M-10.
    • P.Y. Delaunay, M. Razeghi, in: SPIE Photonic West Proceedings - Quantum Sensing and Nanophotonic Devices V, vol. 6900, (2008) p. 69000M-1-69000M-10.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.