Effect of field-annealing on magnetostriction and tunneling magnetoresistance of Co/AlOx/Co/IrMn junctions

Journal of Alloys and Compounds

Volumn 489, Issue 1, 2010, Pages 242-245

  Chen, Yuan Tsung ^a   Tseng, Jiun Yi ^b   Chang, C C ^a   Liu, W C ^a   Jang, Jason Shian Ching ^c  

^a I SHOU UNIVERSITY   (Taiwan)

^b INSTITUTE OF PHYSICS   (Taiwan)

^c NATIONAL CENTRAL UNIVERSITY   (Taiwan)

Author keywords

Field annealing effect; Magnetic films and multilayers; Magnetoresistance; Magnetostriction ( s); Oxidation

Indexed keywords

ANNEALING CONDITION; ANNEALING EFFECTS; EDS ANALYSIS; GLASS SUBSTRATES; MAGNETIC FILMS AND MULTILAYERS; MAXIMUM RATIO; MINIMUM VALUE; SI(1 0 0); TUNNELING MAGNETORESISTANCE;

ELECTRIC RESISTANCE; MAGNETIC FILMS; MAGNETIC MULTILAYERS; MAGNETOELECTRONICS; MAGNETORESISTANCE; MAGNETOSTRICTION; MAGNETOSTRICTIVE DEVICES; METALLIC FILMS; OXIDATION; SILICON; TUNNELING (EXCAVATION); WIND TUNNELS;

ANNEALING;

EID: 70649096079     PISSN: 09258388     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jallcom.2009.09.062     Document Type: Article

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