The influence of Sm doping in the electron-doped manganites La0.9Te0.1MnO3

Journal of Alloys and Compounds

Volumn 489, Issue 2, 2010, Pages 348-352

  Zheng, G H ^a,b   Dai, Z X ^a,b   Zhang, Y Y ^a,b   Sun, Y P ^a,b  

^a ANHUI UNIVERSITY   (China)

^b INSTITUTE OF SOLID STATE PHYSICS   (China)

Author keywords

Structural properties; Transport mechanism

Indexed keywords

DOPING LEVELS; ELECTRON-DOPED; LATTICE DISTORTIONS; MAGNETIC AND TRANSPORT PROPERTIES; METAL INSULATORS; RESISTIVITY CURVES; RHOMBOHEDRAL STRUCTURES; SMALL POLARONS; SPACE GROUPS; TEMPERATURE DEPENDENCE; TRANSPORT MECHANISM;

BINDING ENERGY; CARRIER CONCENTRATION; FLUORINE CONTAINING POLYMERS; MANGANESE COMPOUNDS; METAL INSULATOR BOUNDARIES; METAL INSULATOR TRANSITION; OXIDE MINERALS; POLARONS; SEMICONDUCTOR DOPING; TELLURIUM COMPOUNDS; TRANSPORT PROPERTIES;

STRUCTURAL PROPERTIES;

EID: 70649084976     PISSN: 09258388     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jallcom.2009.09.130     Document Type: Article

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