Wet-process deposition of TSV liner and metal films

2009 IEEE International Conference on 3D System Integration, 3DIC 2009

Volumn , Issue , 2009, Pages

  Truzzi, Claudio ^a   Raynal, Frederic ^a   Mevellec, Vincent ^a  

^a Alchimer   (France)

Author keywords

[No Author keywords available]

Indexed keywords

BARRIER PROPERTIES; BASIC PROPERTIES; COPPER SEED; ELECTROGRAFTING; HIGH ASPECT RATIO; METAL FILM; THERMOMECHANICAL PROPERTIES; THROUGH SILICON VIAS; WET PROCESS;

ASPECT RATIO; DIFFUSION BARRIERS; ELECTRIC PROPERTIES; SHOTCRETING; THREE DIMENSIONAL;

MECHANICAL PROPERTIES;

EID: 70549109021     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/3DIC.2009.5306553     Document Type: Conference Paper

References (8)

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5. rd IEEE IITC Conf., Burlingame, CA, June 2008, pp. 159-161.
6. Suhr, D. et al, "TSV metallization: a novel approach for insulation/barrier/copper seed layer deposition based on wet electrografting and chemical grafting technologies," Proc. MRS Fall Conf., Boston, MA, Dec. 2008, under press.
7. Raynal, F. et al, "Electrografted seed layers for metallization of deep TSV structures", Proc. ECTC 09, San Diego, FL, May 09
8. Lerner, S., "Economic advancement of high-aspectratio through-silicon vias for 3D integration," Future Fab Intl., Issue 26, (2008).