Direct plating of Cu on ALD TaN for 45nm-node Cu BEOL metallization

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2004, Pages 337-340

  Shih, C H ^a   Su, H W ^a   Lin, C J ^a   Ko, T ^a   Chen, C H ^a   Huang, J J ^a   Chou, S W ^a   Peng, C H ^a   Hsieh, C H ^a   Tsai, M H ^a   Shue, Winston S ^a   Yu, C H ^a   Liang, M S ^a  

^a TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ADHESION; ASPECT RATIO; COPPER; DELAMINATION; ELECTRIC RESISTANCE; ELECTROMIGRATION; GRAFTING (CHEMICAL); METALLIZING; MONOLAYERS; PHYSICAL VAPOR DEPOSITION; TANTALUM COMPOUNDS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION; ALUMINUM COMPOUNDS; ATOMIC LAYER DEPOSITION;

45 NM-NODE TECHNOLOGY; ALD BARRIERS; LINE RESISTANCE; ORGANIC FILMS;

ELECTROPLATING; TANTALUM COMPOUNDS;

45NM NODE; DIRECT PLATING; ELECTRO-DEPOSITION; ELECTROGRAFTING; GRAFTING PROCESS; GRAFTING TECHNIQUES; LIFETIME PERFORMANCE; LINE RESISTANCE; METALLISATION; VIA RESISTANCE;

EID: 21644438133     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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